Thyristor Chip

Short Description:

Product Detail:

Standard:

?Every chip?is?tested at TJM?, random inspection?is?strictly prohibited.

?Excellent consistency of the chips?parameters

?

Features:

?Low on-state?voltage drop

?Strong thermal fatigue resistance

?The thickness of cathode aluminum layer is above 10μm

?Double layers protection on mesa


Product Detail

Product Tags

runau fast switch thyristor chip 3

?Thyristor Chip

The thyristor chip?manufactured by RUNAU Electronics was originally introduced by GE processing standard and technology which compliant of USA application standard and qualified by worldwide clients. It’s featured in strong thermal fatigue resistance characteristics,?long service life, high voltage, large current, strong environmental adaptability, etc.?In 2010, RUNAU Electronics developed new pattern of thyristor chip which combined the traditional advantage of GE and European technology, the performance and efficiency were optimized greatly.

Parameter:

Diameter
mm
Thickness
mm
Voltage
V
Gate Dia.
mm
Cathode Inner Dia.
mm
Cathode Out Dia.
mm
Tjm
25.4 1.5±0.1 ≤2000 2.5 5.6 20.3 125
25.4 1.6-1.8 2200-3500 2.6 5.6 15.9 125
29.72 2±0.1 ≤2000 3.3 7.7 24.5 125
32 2±0.1 ≤2000 3.3 7.7 26.1 125
35 2±0.1 ≤2000 3.8 7.6 29.1 125
35 2.1-2.4 2200-4200 3.8 7.6 24.9 125
38.1 2±0.1 ≤2000 3.3 7.7 32.8 125
40 2±0.1 ≤2000 3.3 7.7 33.9 125
40 2.1-2.4 2200-4200 3.5 8.1 30.7 125
45 2.3±0.1 ≤2000 3.6 8.8 37.9 125
50.8 2.5±0.1 ≤2000 3.6 8.8 43.3 125
50.8 2.6-2.9 2200-4200 3.8 8.6 41.5 125
50.8 2.6-2.8 2600-3500 3.3 7 41.5 125
55 2.5±0.1 ≤2000 3.3 8.8 47.3 125
55 2.5-2.9 ≤4200 3.8 8.6 45.7 125
60 2.6-3.0 ≤4200 3.8 8.6 49.8 125
63.5 2.7-3.1 ≤4200 3.8 8.6 53.4 125
70 3.0-3.4 ≤4200 5.2 10.1 59.9 125
76 3.5-4.1 ≤4800 5.2 10.1 65.1 125
89 4-4.4 ≤4200 5.2 10.1 77.7 125
99 4.5-4.8 ≤3500 5.2 10.1 87.7 125

?

Technical specification:

RUNAU Electronics provides power semiconductor?chips of phase controlled thyristor and fast switch thyristor.

1. Low on-state voltage drop

2. The thickness of aluminum layer is?more than 10 microns

3. Double layer protection mesa

?

Tips:

1. In order to remain the?better performance, the chip shall be stored in nitrogen or vacuum condition to prevent the voltage change caused by oxidation and humidity of molybdenum pieces

2. Always?keep the?chip?surface clean, please wear gloves and do not touch the chip with bare hands

3. Operate carefully in the process of use. Do not damage the resin edge surface of the chip and the aluminum layer in the pole area of the gate and cathode

4. In?test or encapsulation, please note that the parallelism, flatness and clamp force?the fixture must be coincide with the specified standards. Poor parallelism will result in uneven pressure and chip damage by force. If excess clamp force imposed, the chip will be damaged?easily. If imposed?clamp force?is too small, the poor contact and heat dissipation will affect?the application.

5. The pressure block in contact with the cathode surface of the chip must be annealed

?Recommend Clamp Force

?Chips Size ?Clamp Force Recommendation
?(KN)±10%
?Φ25.4 4?
?Φ30 or Φ30.48 ?10
?Φ35 ?13
?Φ38 or Φ40 ?15
?Φ50.8 ?24
?Φ55 ?26
?Φ60 ?28
?Φ63.5 ?30
?Φ70 ?32
?Φ76 ?35
?Φ85 ?45
?Φ99 ?65

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